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| TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS Designed for Complementary Use with TIP145, TIP146 and TIP147 125 W at 25C Case Temperature 10 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A C B SOT-93 PACKAGE (TOP VIEW) 1 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING TIP140 Collector-base voltage (IE = 0) TIP141 TIP142 TIP140 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. TIP141 TIP142 VEBO IC ICM IB Ptot Ptot 1/2LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE 60 80 100 60 80 100 5 10 15 0.5 125 3.5 100 -65 to +150 -65 to +150 260 V A A A W W mJ C C C V V UNIT This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 1 W/C. Derate linearly to 150C free air temperature at the rate of 28 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature PARAMETER V(BR)CEO Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage IC = 30 mA (see Note 5) VCE = 30 V VCE = 40 V VCE = 50 V VCB = 60 V VCB = 80 V VCB = 100 V VEB = VCE = VCE = IB = IB = VCE = IE = 5V 4V 4V 10 mA 40 mA 4V 10 A IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = 5A (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 1000 500 2 3 3 3.5 V V V TEST CONDITIONS TIP140 IB = 0 TIP141 TIP142 TIP140 TIP141 TIP142 TIP140 TIP141 TIP142 MIN 60 80 100 2 2 2 1 1 1 2 mA mA mA V TYP MAX UNIT ICEO ICBO IEBO hFE V CE(sat) VBE VEC IC = 10 A IC = 5 A IC = 10 A IC = 10 A IB = 0 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. resistive-load-switching characteristics at 25C case temperature PARAMETER ton toff TEST CONDITIONS IC = 10 A VBE(off) = -4.2 V IB(on) = 40 mA RL = 3 MIN IB(off) = -40 mA tp = 20 s, dc 2% TYP 0.9 11 MAX UNIT s s Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 70000 TCS140AA COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 2*0 tp = 300 s, duty cycle < 2% IB = I C / 100 1*5 TCS140AB hFE - Typical DC Current Gain TC = -40C TC = 25C TC = 100C 10000 1*0 1000 0*5 TC = -40C TC = 25C TC = 100C 0 0*5 1*0 IC - Collector Current - A 10 20 VCE = 4 V tp = 300 s, duty cycle < 2% 100 0*5 1*0 IC - Collector Current - A 10 20 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C 2*5 TC = 100C TCS140AC 2*0 1*5 1*0 0*5 IB = IC / 100 tp = 300 s, duty cycle < 2% 1*0 IC - Collector Current - A 10 20 0 0*5 Figure 3. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAS140AA IC - Collector Current - A 10 1*0 TIP140 TIP141 TIP142 0*1 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 140 Ptot - Maximum Power Dissipation - W TIS140AA 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP |
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